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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-220F package *Complement to type 2SB1228 *High DC current gain. *Large current capacity and wide ASO. *Low saturation voltage. *DARLINGTON APPLICATIONS *Suitable for use in control of motor drivers, printer hammer drivers,relay drivers,and constant-voltage regulators. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1830 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector dissipation 2 Tj Tstg Junction temperature Storage temperature 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 110 100 6 8 12 20 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=5mA; IE=0 IC=50mA; RBE=> IC=4A ; IB=8mA IC=4A ; IB=8mA VCB=80V;IE=0 VEB=5V;IC=0 IC=4A ; VCE=3V IC=4A ; VCE=5V 1500 MIN 110 100 2SD1830 SYMBOL V(BR)CBO V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT TYP. MAX UNIT V V 0.9 1.5 2.0 0.1 3.0 V V mA mA 4000 20 MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=500IB1=-500IB2=4A VCC=50V ,RL=12.5D 0.6 4.8 1.6 s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1830 Fig.2 Outline dimensions 3 |
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